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SUPPLEMENT
AM29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory--Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation -- 5.0 Volt-only operation for read, erase, and program operations -- Minimizes system level requirements s Manufactured on 0.35 m process technology -- Compatible with 0.5 m AM29F800 device s High performance -- 90 or 120 ns access time s Low power consumption (typical values at 5 MHz) -- 1 A standby mode current -- 20 mA read current (byte mode) -- 28 mA read current (word mode) -- 30 mA program/erase current s Flexible sector architecture -- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) -- One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) -- Supports full chip erase -- Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms -- Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors -- Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 1,000,000 write cycles per sector guaranteed s Compatibility with JEDEC standards -- Pinout and software compatible with singlepower-supply Flash -- Superior inadvertent write protection s Data# Polling and toggle bits -- Provides a software method of detecting program or erase operation completion s Ready/Busy# pin (RY/BY#) -- Provides a hardware method of detecting program or erase cycle completion s Erase Suspend/Erase Resume -- Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation s Hardware reset pin (RESET#) -- Hardware method to reset the device to reading array data
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Publication# 21631 Rev: A Amendment/+2 Issue Date: April 1998
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GENERAL DESCRIPTION
The AM29F800B in Known Good Die (KGD) form is a 8 Mbit, 5.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y a n d c o s t effectiveness. The device electrically erases all bits within a sector simultaneously via F o w l e r -N o r d h e i m t u n n e l i n g . T h e d a t a i s programmed using hot electron injection.
AM29F800B Features
The AM29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 w ord s . Th e w or d-w ide da ta (x 1 6) a ppe ars o n DQ15-DQ0; the byte-wide (x8) data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt V CC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers. This device is manufactured using AMD's 0.35 m process technology, and offers all the features and benefits of the AM29F800, which was manufactured using 0.5 m process technology. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed)
ELECTRICAL SPECIFICATIONS
Refer to the AM29F800B data sheet, PID 21504, for full electrical specifications on the AM29F800B in KGD form.
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PRODUCT SELECTOR GUIDE
Family Part Number Speed Option (VCC = 5.0 V 10%) Max access time, ns (tACC) Max CE# access time, ns (tCE) Max OE# access time, ns (tOE) -90 90 90 35 AM29F800B KGD -120 120 120 50
DIE PHOTOGRAPH
DIE PAD LOCATIONS
Orientation relative to leading edge of tape and reel
9
8
7
6
5
4
3
2
1
44 43 42 41 40 39 38 37 36
10 11 12
35 34 33
AMD logo location
13
32
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
Orientation relative to top left corner of Gel-Pak
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PAD DESCRIPTION
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Signal VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X 0.00 7.22 13.45 19.59 25.82 31.96 38.19 44.33 50.56 58.61 60.50 60.50 60.13 53.99 48.28 42.14 36.43 30.29 24.58 18.34 12.63 2.54 -10.00 -20.07 -25.78 -31.92 -37.63 -43.77 -49.48 -55.62 -61.33 -67.47 -67.84 -67.84 -67.84 -57.84 -49.86 -43.63 -37.49 -31.26 -25.12 -18.89 -12.75 -6.52 Y 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 -1.42 6.84 18.99 279.88 279.88 279.88 279.88 279.88 279.88 279.62 279.88 279.88 283.85 283.85 279.88 279.88 279.88 279.88 279.88 279.88 279.88 279.88 279.88 18.99 6.84 -4.00 -2.39 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Pad Center (millimeters) X Y 0.0000 0.0000 0.1835 0.0000 0.3417 0.0000 0.4977 0.0000 0.6559 0.0000 0.8119 0.0000 0.9701 0.0000 1.1261 0.0000 1.2843 0.0000 1.4887 -0.0361 1.5367 0.1738 1.5367 0.4823 1.5274 7.1090 1.3714 7.1090 1.2264 7.1090 1.0704 7.1090 0.9254 7.1090 0.7694 7.1090 0.6244 7.1024 0.4659 7.1090 0.3209 7.1090 0.0646 7.2098 -0.2538 7.2098 -0.5096 7.1090 -0.6546 7.1090 -0.8106 7.1090 -0.9556 7.1090 -1.1116 7.1090 -1.2566 7.1090 -1.4126 7.1090 -1.5576 7.1090 -1.7136 7.1090 -1.7229 0.4823 -1.7229 0.1738 -1.7229 -0.1015 -1.4691 -0.0608 -1.2661 0.0000 -1.1082 0.0000 -0.9522 0.0000 -0.7940 0.0000 -0.6380 0.0000 -0.4798 0.0000 -0.3238 0.0000 -0.1656 0.0000
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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ORDERING INFORMATION Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: AM29F800B T -90 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to +85C) E = Extended (-55C to +125C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 180 die per 5 tray stack DG = DT = Gel-Pak(R) Die Tray 378 die per 6 tray stack SurftapeTM (Tape and Reel) 1800 per 7-inch reel
DW = Gel-Pak(R) Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity SPEED OPTION See Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector
DEVICE NUMBER/DESCRIPTION AM29F800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory--Die Revision 1 5.0 Volt-only Program and Erase
Valid Combinations AM29F800BT-90, AM29F800BB-90, AM29F800BT-120 AM29F800BB-120 DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1
Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
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SUPPLEMENT
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD's Known Good Die test flow. For more detailed information, refer to the AM29F800B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in.
Wafer Sort 1
DC Parameters Functionality Programmability Erasability
Bake 24 hours at 250C
Data Retention
Wafer Sort 2
DC Parameters Functionality Programmability Erasability
Wafer Sort 3 High Temperature
DC Parameters Functionality Programmability Erasability Speed
Packaging for Shipment
Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack
Shipment
Figure 1.
AMD KGD Product Test Flow
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PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . 141.34 mils x 306.30 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.59 mm x 7.78 mm Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 m x 100 m Pad Area Free of Passivation . . . . . . . . . .15.52 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 m2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC Manufacturing ID (Top Boot) . . . . . . . . . . . . 98924AK (Bottom Boot) . . . . . . . .98924ABK Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . . . . CS39 Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V Junction Temperature Under Bias . .TJ (max) = 130C Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0C to +70C Industrial . . . . . . . . . . . . . . . . . . . -40C to +85C Extended . . . . . . . . . . . . . . . . . . -55C to +125C
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TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this agreement shall be subject to AMD's standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD's standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants articles of its manufacture against defective materials or workmanship for a period of ninety (90) days from date of shipment. This warranty does not extend beyond AMD's customer, and does not extend to die which has been affixed onto a board or substrate of any kind. The liability of AMD under this warranty is limited, at AMD's option, solely to repair or to replacement with equivalent articles, or to make an appropriate credit adjustment not to exceed the original sales price, for articles returned to AMD, provided that: (a) The Buyer promptly notifies AMD in writing of each and every defect or nonconformity in any article for which Buyer wishes to make a warranty claim against AMD; (b) Buyer obtains authorization from AMD to return the article; (c) the article is returned to AMD, transportation charges paid by AMD, F.O.B. AMD's factory; and (d) AMD's examination of such article discloses to its satisfaction that such alleged defect or nonconformity actually exists and was not caused by negligence, misuse, improper installation, accident or unauthorized repair or alteration by an entity other than AMD. The aforementioned provisions do not extend the original warranty period of any article which has either been repaired or replaced by AMD. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD'S PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD SH ALL N OT IN AN Y EVEN T BE LIABLE FOR DAMAGES BY REASON OF FAILURE OF ANY PRODUCT TO FUNCTION PROPERLY OR FOR ANY SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF USE OR COST OF LABOR BY REASON OF THE FACT THAT SUCH ARTICLES SHALL HAVE BEEN DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD's warranty. Buyer assumes all responsibility for successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD Products which are the subject hereof, AMD assumes no responsibility for environmental effects on die. AMD products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer's use of AMD products for use in life support applications is at Buyer's own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale.
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REVISION SUMMARY FOR AM29F800B KGD Revision A+1, A+2
Distinctive Characteristics Changed typical program/erase time to 30 mA to match the CMOS DC Characteristics table in the Am29F400B full data sheet. The minimum guarante per sector is now 1 million cycles. Pad Description Corrected the following dimensions: X (mils): pads 15, 18, 36 Y (mils): pads 10-12, 35, 36 X (mm): pads 2-22, 37, 38 Y (mm): pads 10-12, 23-32, 35, 36 Physical Specifications Changed die thickness specification to ~20 mils.
Trademarks Copyright (c) 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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